LL41 Datasheet, PDF (1/2 Pages) General Semiconductor – Schottky Diodes

R
SEMICONDUCTOR
LL41
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
For general purpose applications
This diode features very low turn-on voltage and high breakdown
voltage .These devices are protected by a PN junction guard ring against
excessive voltage, such as electrostatic discharges.
This diode is also available in the DO-35 case with type designation BAT41.
High temperature soldering guaranteed:260℃/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
MECHANICAL DATA
Case: MiniMELF glass case(SOD-80 )
Polarity: Color band denotes cathode end
Weight: Approx. 0.05 gram
ABSOLUTE RATINGS(LIMITING VALUES)
MiniMELF
JF
0.063(1.6)
0.055(1.4)
0.142(3.6)
0.134(3.4)
0.019(0.48)
0.011(0.28)
Dimensions in inches and (millimeters)
Repetitive Peak Reverse Voltage
Forward Continuous Current at TA=25 C
Repetitive Peak Forward Current at tp ＜1s, d＜ 0.5,
Surge forward current at tp ＜ 10mS , TA=25 C
Power Dissipation at TA=65 C
TA=25 C
Junction temperature
Ambient Operating temperature Range
Storage Temperature Range
1) Valid provided that electrodes are kept at ambient temperature
Symbols
VRRM
IF
IFRM
IFSM
Ptot
TJ
TA
TSTG
Value
100
1)
100
1)
350
1)
750
1)
400
125
-65 to+125
-65 to+150
Units
V
mA
mA
mA
mW
C
C
C
ELECTRICAL CHARACTERISTICS
Reverse breakdown voltage Tested with 100mA/300ms Pulses
Forward voltage
Pulse Test tp ＜ 300ms
at IF=1mA,
at IF=200mA
Leakage current Pulse Test tp ＜ 300ms
at VR=50V
at VR=50V,TJ=100 C
Junction Capacitance at VR=1V ,f=1MHz
Reverse recovery time Form IF=10mA,IR=10mA,IR=1mA
Thermal resistance junction to ambient Air
1) Valid provided that electrodes are kept at ambient temperature
Symbols
V(BR)R
VF
VF
IR
IR
CJ
trr
RqJA
Min.
100
Typ.
110
0.40
2
Max.
0.45
1.00
100
20
5
300 ¹⁾
JINAN JINGHENG CO., LTD.
2-43
NO.51 HEPING ROAD JINAN P.R. CHINA TEL:[phone] FAX:[phone]
Unis
V
V
V
nA
mA
pF
ns
K/W
WWW.JIFUSEMICON.COM