LL103A Datasheet, PDF (1/3 Pages) Semtech Corporation – Silicon Schottky Barrier Diode for general purpose applications

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SEMICONDUCTOR
LL103A THUR LL103C
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
For general purpose applications
The LL103 series is a Metal-on-silicon junction Schottky barrier device which
is protected by a PN junction guard ring. The low forward voltage drop and fast
switching make it ideal for protection of MOS devices, steering, biasing, and coupling ^JF
diodes for fast switching and low logic level applications. Other applications are click
suppressions, efficient full wave bridges in telephone subsets, and blocking diodes in
rechargeable low voltage battery systems.
These diodes are also available in the DO-35 case with the type designation
SD103A to SD103C.
High temperature soldering guaranteed:260℃/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
MiniMELF
0.142(3.6)
0.134(3.4)
0.063(1.6)
0.055(1.4)
0.019(0.48)
0.011(0.28)
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: MiniMELF glass case(SOD-80 )
Polarity: Color band denotes cathode end
Weight: Approx. 0.05 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Peak Reverse Voltage
LL103A
LL103B
LL103C
Power Dissipation (infinite Heat Sink)
Maximum Single cycle surge 60Hz sine wave
Junction temperature
Storage Temperature Range
1) Valid provided that electrodes are kept at ambient temperature
Symbols
VRRM
VRRM
VRRM
Ptot
IFSM
TJ
TSTG
Value
40
30
20
400 ¹⁾
15
125
-55 to+150
Units
V
V
V
mW
A
C
C
ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbols
Min.
Leakage current at VR=30V
LL103A
IR
VR=20V
LL103B
IR
VR=10V
LL103C
IR
Forward voltage drop at IF=20mA
VF
IF=200mA
VF
Junction Capacitance at VR=0V ,f=1MHz
CJ
Reverse Recovery time at IF=IR=50mA,recover to 200mA
trr
recover to 0.1 IR
Typ.
50
10
Max.
5
5
5
0.37
0.6
Unis
mA
mA
mA
V
V
pF
ns
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