BAT48 Datasheet, PDF (1/3 Pages) General Semiconductor – Schottky Diodes

R
SEMICONDUCTOR
BAT48
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
For general purpose applications
This diode features very low turn-on voltage and fast switching.
This device is protected by a PN junction guard ring against excessive
voltage, such as electrostatic discharges.
This diode is also available in the MiniMELF case with the type designation Ll48.
High temperature soldering guaranteed:260℃/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
DO-35
0.079(2.0)
MAX
DIA
1.083(27.5)
MIN
0.150(3.8)
MAX
MECHANICAL DATA
Case: DO-35 glass case
Polarity:color band denotes cathode end
Weight: Approx. 0.13 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols
Repetitive Peak Reverse Voltage
Forward Continuous Current at TA=25 C
Repetitive Peak Forward Current at tp<1s, d<0.5
Surge forward current at tp<10ms , TA=25 C
Power Dissipation at TA=65 C
Junction temperature
Ambient Operating temperature Range
Storage Temperature Range
TA=25 C
VRRM
IF
IFRM
IFSM
Ptot
TJ
TA
TSTG
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
0.020(0.52)
MAX
DIA
1.083(27.5)
MIN
Dimensions in inches and (millimeters)
Value
40
1)
350
1)
1
1)
7.5
1)
330
125
-65 to+125
-65 to+150
Units
V
mA
A
A
mW
C
C
C
ELECTRICAL CHARACTERISTICS
Symbols
Min.
Typ.
Reverse breakdown voltage Tested with 100mA pulses
V(BR)R
40
Forward voltage
Pulse Test tp 300ms,d 2%
at IF=0.1mA,
VF
at IF=10mA,
VF
at IF=250mA
VF
Leakage current
pulse test tp 300ms ,d 2%
at VR=10V
IR
at VR=10V, TJ=60 C
IR
at VR=20V
IR
at VR=20V, TJ=60 C
IR
at VR=40V
IR
at VR=40V, TJ=60 C
IR
Capacitance at VR=1V ,f=1MHz
CJ
12
Thermal resistance junction to ambient Air
RqJA
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature(DO-35)
Max.
0.25
0.40
0.90
2
15
5
25
25
50
300 ¹⁾
2-29
JINAN JINGHENG CO., LTD.
NO.51 HEPING ROAD JINAN P.R. CHINA TEL:[phone] FAX:[phone]
Unis
V
V
V
V
mA
mA
mA
mA
mA
mA
pF
K/W
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