BAT42W Datasheet, PDF (1/1 Pages) Pan Jit International Inc. – SURFACE MOUNT SCHOTTKY BARRIER DIODES

SEMICONDUCTOR
BAT42W,BAT43W
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
For general purpose applications
These diodes features very low turn-on voltage and fast
switching. These devices are protected by a PN
JF
junction guard ring against excessive
voltage, such as electrostatic discharges.
These diodes are also available in the Mini-MELF case
with type designation LL42 to LL43 and in the DO-35 case
with the type designation BAT42 to BAT43,in the Micro-MELF case
with type designation MCL42 to MCL43
MECHANICAL DATA
Case: SOD-123 plastic case
Weight: Approx. 0.01 gram
ABSOLUTE RATINGS(LIMITING VALUES)
SOD-123
(
Dimensions in inches and (millimeters)
Repetitive Peak Reverse Voltage
Forward Continuous Current at TA=25 C
Repetitive Peak Forward Current at tp 1s, d 0.5, TA=25 C
Surge forward current at tp 10mS , TA=25 C
Power Dissipation¹⁾ at TA=65 C
Junction temperature
Ambient Operating temperature Range
Storage Temperature Range
1) Valid provided that electrodes are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
Symbols
VRRM
IF
IFRM
IFSM
Ptot
TJ
TA
TSTG
Value
30
200 ¹⁾
500 ¹⁾
4 ¹⁾
200 ¹⁾
125
-55 to+125
-55 to+150
Units
V
mA
mA
A
mW
C
C
C
Symbols
Reverse breakdown voltage Tested with 100mA Pulses
V(BR)R
Forward voltage Pulse Test tp 300ms,d 2%
at IF=200mA,
VF
atIF=10mA,
BAT42W
VF
atIF=50mA,
BAT42W
VF
at IF=2mA ,
BAT43W
VF
atIF=15mA,
BAT43W
VF
Leakage current pulse test tp 300ms ,d 2% at VR=25V,
at VR=50V, TJ=100 C
Junction Capacitance at VR=25V ,f=1MHz
Reverse Recovery time Form IF=10mA,through
IR=1mA RL=100W
Detection efficiency at RL=15KW CL=300pF,f=45MHz, VR=2V
Thermal resistance junction to ambient
1) Valid provided that electrodes are kept at ambient temperature
IR
IR
Ctot
trr
RqJA
Min.
30
0.26
80
Typ.
Max.
1
0.4
0.65
0.33
0.45
0.5
100
7
5
300 ¹⁾
JINAN JINGHENG CO., LTD.
2-22
NO.51 HEPING ROAD PR CHINA TEL:[phone] FAX:[phone]
Unis
V
V
V
V
V
V
mA
mA
pF
ns
%
K/W
WWW.JIFUSEMICON.COM