1N5712 Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – SMALL SIGNAL SCHOTTKY DIODES

R
SEMICONDUCTOR
1N5712
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
Metal-on-silicon junction
High breakdown voltage
Low turn-on voltage
Ultrafast switching speed
Primarily intended for high level UHF/VHF detectionand pulse applications
with broad dynamic range
The diode is also available in the MiniMELF case with type designation LL5712.
High temperature soldering guaranteed:260℃/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
DO-35
0.079(2.0)
MAX
DIA
1.083(27.5)
MIN
0.150(3.8)
MAX
MECHANICAL DATA
Case: DO-35 glass case
Polarity: color band denotes cathode end
Weight: Approx. 0.13 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Peak Reverse Voltage
Power Dissipation (infinite Heat Sink)
Forward Continuous Current
Junction and Storage temperature range
Maximum Lead Temperature for Soldering during 10S at 4mm from Case
Symbols
VRRM
Ptot
IF
TJ/TSTG
TL
0.020(0.52)
MAX
DIA
1.083(27.5)
MIN
Dimensions in inches and (millimeters)
Value
20
430
35
-55 to+150
230
Units
V
mW
mA
C
C
ELECTRICAL CHARACTERISTICS
Reverse breakover voltage
at IR=10mA
Leakage current at VR=15V
Forward voltage drop
at IF=1mA
Test pulse: tp ≤ 300ms d ＜ 2% IF=35mA
Junction Capacitance at VR=0V ,f=1MHz
Thermal resistance
Symbols
VR
IR
VF
VF
CJ
RqJA
Min.
Typ.
Max.
Unis
V
20
V
100
nA
0.55
V
1.0
V
1.2
PF
400
K/W
JINAN JINGHENG CO., LTD.
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