CJMNT32-W Datasheet, PDF (3/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – PNP Power Transistor with N-MOSFET

Typical Characteristics
N-channel Characteristics
5
T =25℃
a
Pulsed
4
3
2
Output Characteristics
5.5V
4.5V
3.5V
2.5V
1
V =1.5V
GS
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
DRAIN TO SOURCE VOLTAGE V (V)
DS
600
500
400
300
200
100
0
100
200
R_DS(ON) —— I_D
V =1.8V
GS
V =2.5V
GS
V =4.5V
GS
T =25℃
a
Pulsed
400
600
800
DRAIN CURRENT I (mA)
D
500
V =16V
DS
Pulsed
400
Transfer Characteristics
300
T =100℃
a
200
T =25℃
a
100
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
GATE TO SOURCE VOLTAGE V (V)
GS
R_DS(ON) —— V_GS
500
T =25℃
a
Pulsed
400
I =600mA
D
300
200
1
2
3
4
5
GATE TO SOURCE VOLTAGE V (V)
GS
I_S —— V_SD
500
0.85
100
0.80
T =100℃
0.75
a
10
Pulsed
T =25℃
a
0.70
Pulsed
1
0.65
0.1
0.0
0.2
0.4
0.6
0.8
1.0
SOURCE TO DRAIN VOLTAGE V (V)
SD
www.cj-elec.com
1.2
3
0.60
25
Threshold Voltage
I =250uA
D
50
75
100
125
JUNCTION TEMPERATURE T (℃)
J
A-3,Jan,2016