CJMNT31 Datasheet, PDF (3/6 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – PNP Power Transistor with N-MOSFET

PNP Transistor Typical Characteristics
PNP Transistor
2000
1800
1600
COMMON
EMITTER
T =25℃
a
1400
Static Characteristic
-5mA
-4.5mA
-4mA
-3.5mA
1200
-3mA
1000
-2.5mA
800
-2mA
600
-1.5mA
400
-1mA
200
0
-0
I =-0.5mA
B
-2
-4
-6
-8
-10
-12
COLLECTOR-EMITTER VOLTAGE V (V)
CE
-1.2
V_BEsat —— I_C
-1.0
-0.8
T =25℃
a
-0.6
T =100 ℃
a
-0.4
-0.2
-0.0
-1
1200
-10
-100
COLLECTOR CURREMT I (mA)
C
β=10
-1000
-3000
P_C —— T_a
1000
800
600
400
200
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE T (℃)
a
500
h_FE —— I_C
450
400
T =100℃
a
350
300
T =25℃
a
250
200
150 _{COMMON EMITTER}
V = 2V
CE
100
-1
-10
-100
COLLECTOR CURRENT I (mA)
C
-1000
-3000
-1000
V_CEsat ——
I_C
-100
T =100 ℃
a
T =25℃
-10
a
-1
-1
500
100
10
-10
-100
COLLECTOR CURREMT I (mA)
C
C_ob/C_ib —— V_CB/V_EB
C
ib
β=10
-1000
-3000
f=1MHz
I =0/I =0
E
C
T =25 ℃
a
C
ob
1
-0.1
-1
-10
-20
REVERSE VOLTAGE V (V)
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3
G,May,2015