JCT655 Datasheet, PDF (2/5 Pages) JIEJIE MICROELECTRONICS CO.,Ltd – 55A SCRs

JCT655/855 Series
Critical rate of rise of on-state current
(I_G=2×I_GT)
Peak gate current
Average gate power dissipation
Peak gate power
JieJie Microelectronics CO. , Ltd
dI/dt
I_GM
P_G(AV)
P_GM
150
A/μs
5
A
1
W
10
W
ELECTRICAL CHARACTERISTICS (T_j=25℃ unless otherwise specified)
Symbol
Test Condition
MIN.
Value
TYP.
MAX.
I_GT
10
V_D=12V R_L=33Ω
V_GT
-
V_GD V_D=V_DRM T_j=125℃ R_L=3.3KΩ
0.2
I_L
I_G=1.2I_GT
-
I_H
I_T=500mA
-
dV/dt V_D=2/3V_DRM Gate Open T_j=125℃ 700
15
50
-
1.5
-
-
-
100
-
80
-
-
Unit
mA
V
V
mA
mA
V/μs
STATIC CHARACTERISTICS
Symbol
Parameter
V_TM I_TM=80A tp=380μs
T_j=25℃
I_DRM
I_RRM
V_D=V_DRM V_R=V_RRM
T_j=25℃
T_j=125℃
Value(MAX) Unit
1.6
V
10
μA
6
mA
THERMAL RESISTANCES
Symbol
Parameter
R_th(j-c) junction to case(AC)
TO-3P(Ins)
TO-247S /TO-247
Value
0.65
0.6
Unit
℃/W
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