JCT1625 Datasheet, PDF (2/5 Pages) JIEJIE MICROELECTRONICS CO.,Ltd – 25A SCRs

JCT1625 Series
JieJie Microelectronics CO. , Ltd
Non repetitive surge peak on-state current
(tp=10ms)
I_TSM
I²t value for fusing (tp=10ms)
I²t
Critical rate of rise of on-state current
( I_G=2× I_GT)
dI/dt
Peak gate current
I_GM
250
A
310
A²s
100
A/μs
1.5
A
Average gate power dissipation
P_G(AV)
2
W
Peak gate power
P_GM
5
W
ELECTRICAL CHARACTERISTICS (T_j=25℃ unless otherwise specified)
Symbol
Test Condition
MIN.
Value
TYP.
Unit
MAX.
I_GT
V_D=12V R_L=33Ω
V_GT
V_GD VD=VDRM Tj=125℃ RL=3.3KΩ
-
-
35 mA
-
-
1.5 V
0.25
-
-
V
I_L
I_G=1.2 I_GT
-
-
80 mA
I_H
I_T=500mA
-
-
60 mA
dV/dt VD=2/3VDRM Gate Open Tj=125℃
1000
-
- V/μs
STATIC CHARACTERISTICS
Symbol
Parameter
V_TM
I_DRM
I_RRM
I_TM=50A tp=380μs
V_D=V_DRM V _R=V_RRM
T_j=25℃
T_j=25℃
T_j=125℃
Value(MAX) Unit
1.8
V
10
μA
4
mA
THERMAL RESISTANCES
Symbol
Parameter
R_th(j-c)
junction to case(AC)
TO-220A(Ins) /
TO-220F(Ins)
TO-220B(Non-Ins)
Value
3.2
2.3
Unit
℃/W
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