BC856S Datasheet, PDF (2/4 Pages) NXP Semiconductors – PNP general purpose double transistor

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Static Characteristic
-8
-30uA
COMMON
EMITTER
T_a=25ć
-6
-27uA
-24uA
-21uA
-18uA
-4
-15uA
-12uA
-9uA
-2
-6uA
I =-3uA
B
-0
-0
-2
-4
-6
-8
COLLECTOR-EMITTER VOLTAGE V (V)
CE
V_CEsat —— I_C
-1
-0.1
-0.01
-0.1
-100
T =100ć
a
T_a=25ć
-1
-10
COLLECTOR CURRENT I (mA)
C
I
C
—— V
BE
ȕ=20
-100
1000
100
10
-0.1
-2
-1
-0.1
-0.1
500
h —— I
FE
C
T_a=100ć
T_a=25ć
COMMON EMITTER
V = -5V
CE
-1
-10
-100
COLLECTOR CURRENT I (mA)
C
V_BEsat —— I_C
T =25ć
a
T_a=100ć
-1
-10
COLLECTOR CURRENT I (mA)
C
f_T
——
I
C
ȕ=20
-100
-10
-1
-0.1
-0.0
30
10
T_a=100ć
T =25ć
a
COMMON EMITTER
V =-5V
CE
-0.3
-0.6
-0.9
-1.2
BASE-EMMITER VOLTAGE V (V)
BE
C / C —— V / V
ob ib
CB EB
f=1MHz
I =0/I =0
E
C
T =25
a
ć
C
ib
C
ob
1
-0.1
www.cj-elec.com
-1
REVERSE VOLTAGE V (V)
R
-10
-20
2
100
10
-0.1
250
COMMON EMITTER
V =-5V
CE
T =25ć
a
-1
-10
-100
COLLECTOR CURRENT I (mA)
C
P —— T
C
a
200
150
100
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE T (ć)
a
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