3DD13003N9 Datasheet, PDF (2/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (NPN)

Typical Characteristics
Typical Characterisitics
3DD13003N9
1.0
COMMON
EMITTER
T =25℃
a
0.8
Static Characteristic
0.6
I =40mA
B
I =36mA
B
I =32mA
B
I =28mA
B
I =24mA
B
I =20mA
B
0.4
0.2
0.0
0
I =16mA
B
I =12mA
B
I =8mA
B
I =4mA
B
2
4
6
8
10
12
COLLECTOR-EMITTER VOLTAGE V (V)
CE
50
V =5V
CE
40
30
20
h
FE
——
I
C
T =100℃
a
T =25℃
a
10
5
0.01
0.05
0.1
0.5
1 1.5
COLLECTOR CURRENT I (A)
C
600
β=5
500
400
300
200
100
V
——
CEsat
I
C
T =100℃
a
T =25℃
a
0.05
0.1
0.5
1
1.5
COLLECTOR CURRENT I (A)
C
1400
β=5
1200
1000
800
600
400
200
0
0.01
V
—— I
BEsat
C
T =25℃
a
T =100℃
a
0.1
COLLECTOR CURRENT I (A)
C
1 1.5
5000
f=1MHz
I =0/I =0
E
C
T =25℃
a
1000
C / C —— V / V
ob ib
CB EB
C
ib
100
10
0.1
C
ob
0.5
1
5
REVERSE VOLTAGE V (V)
R
10
20
1.50
1.25
1.00
0.75
0.50
0.25
0.00
0
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2
P —— T
C
a
25
50
75
100
125
150
AMBIENT TEMPERATURE T (℃)
a
D,Oct,2014