JME045-12 Datasheet, PDF (1/3 Pages) JIEJIE MICROELECTRONICS CO.,Ltd – Chip - double mesa SCRs of reverse blocking high-voltage

JIEJIE MICROELECTRONICS CO.,Ltd
JME045-12
Description:
1) Chip: double mesa SCRs of reverse blocking high-voltage
2) Chip area: 7.0mm×6.3mm (corner gate thyristor)
3) Technology: mesa glass passivation technology, multilayer metallization
technology and non-void welding by vacuum welding technology
Typical Application:
Reactive power compensation, solid state relay, power module, etc.
Absolute Maximum Ratings (Packaged into modules, unless otherwise specified, T_C=25℃)
Parameter
Operating junction temperature range
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-state current
Peak on-state surge current
I²t value for fusing
Test Conditions
T_j=25℃
T_j=25℃
T_C=80℃
tp=10ms
tp=10ms
Symbol
T_j
V_DRM
V_RRM
I_T(AV)
I_TSM
I²t
Values
-40-125
1200
1200
45
600
1800
V_D=2/3V_DRM I_G=0.3A
Critical rate of rise of on-state current tp=200μs T_j=125℃
dI/dt
150
dI_G/dt=0.3A/μs
Unit
℃
V
V
A
A
A²s
A/μs
Electrical Characteristics (Packaged into modules, unless otherwise specified, T_C=25℃)
Parameter
Test Conditions Symbol
Values
Peak on-state voltage
Repetitive peak off-state current
Repetitive peak reverse current
Triggering gate current
Latching current
Holding current
Triggering gate voltage
Non triggering gate voltage
I_T=135A tp=380μs
V_D=V_DRM
T_C=25℃
T_C=125℃
V_R=V_RRM
T_C=25℃
T_C=125℃
V_D=12V R_L=30Ω
I_G=1.2 I_GT
I _T=1A
V_D=12V R_L=30Ω
V_D=V_DRM T_j=125℃
V_TM
I_DRM1
I_DRM2
I_RRM1
I_RRM2
I_GT
I_L
I_H
V_GT
V_GD
≤1.8
≤10
≤8
≤10
≤8
10-60
≤150
≤120
≤2
≥0.25
Unit
V
μA
mA
μA
mA
mA
mA
mA
V
V
TEL：[phone]
- 1 / 3-
http://www.jjwdz.com