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JME016-16 Datasheet, PDF (1/3 Pages) JIEJIE MICROELECTRONICS CO.,Ltd – Chip - double mesa SCRs of reverse blocking high-voltage | |||
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JIEJIE MICROELECTRONICS CO.,Ltd
JME016-16/18/20
Description:
1) Chip: double mesa SCRs of reverse blocking high-voltage
2) Chip area: 4.5mmÃ4.5mm (corner gate thyristor)
3) Technology: mesa glass passivation technology, multilayer metallization
technology and non-void welding by vacuum welding technology
Typical Application:
Reactive power compensation, solid state relay, power module, etc.
Absolute Maximum Ratings (Packaged into modules, unless otherwise specified, TC=25â)
Parameter
Test Conditions Symbol
Values
Unit
Operating junction temperature range
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-state current
Tj=25â
Tj=25â
TC=80â
Tj
-40-125
â
VDRM 1600/1800/2000 V
VRRM 1600/1800/2000 V
IT(AV)
16
A
Peak on-state surge current
I2t value for fusing
tp=10ms
tp=10ms
ITSM
190
A
I2t
180
A2s
Critical rate of rise of on-state current
VD=2/3VDRM tp=200μs
IG=0.3A Tj=125â
dIG/dt=0.3A/μs
dI/dt
150
A/μs
Electrical Characteristics (Packaged into modules, unless otherwise specified, TC=25â)
Parameter
Test Conditions Symbol
Values
Unit
Peak on-state voltage
Repetitive peak off-state current
Repetitive peak reverse current
Triggering gate current
IT=48A tp=380μs
VD=VDRM
TC=25â
TC=125â
VR=VRRM
TC=25â
TC=125â
VD=12V RL=30Ω
VTM
IDRM1
IDRM2
IRRM1
IRRM2
IGT
â¤1.8
V
â¤10
μA
â¤3
mA
â¤10
μA
â¤3
mA
20-50
mA
Latching current
IG=1.2 IGT
IL
â¤80
mA
Holding current
Triggering gate voltage
IT=1A
IH
VD=12V RL=30Ω
VGT
â¤70
mA
â¤1.5
V
TELï¼+86-513-83639777
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http://www.jjwdz.com
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