CJMNT32 Datasheet, PDF (1/6 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – PNP Power Transistor with N-MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2×2-6L-U Power Management Transistors- MOSFET
CJMNT32 PNP Power Transistor with N-MOSFET
V_(BR)DSS/VR
20V
-32V
R_DS(on)MAX
600mΩ@4.5V
650mΩ@2.5V
700mΩ@1.8V
/
I_D/I_C
0.8A
- 1.5A
DFNWB2×2-6L-U
D
C
FEATURE
z Ultra low collector-to-emitter saturation voltage
z High DC current gain
z Small package DFNWB2×2-6L-U
MARKING
APPLICATION
z ^{Charging circuit}
z Other power management in portable equipment
Equivalent circuit
C
G
S
6
5
4
1
2
3
E
B
D
ABSOLUTE MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
PNP Transistor
V_CBO
V_CEO
V_EBO
I_C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous(Note1)
Collector Current-Continuous(Note2)
I_CM
N-MOSFET
Collector Current-Pulse(Note3)
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
Continuous Drain Current (note 1)
I_D
Collector Current-Continuous(Note2)
I_DM
Collector Current-Pulse(Note3)
Power Dissipation, Temperature and Thermal Resistance
PD
PC
RθJA
Tj
Tstg
TL
Power Dissipation
Power Dissipation (Tc=25℃ ,Note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Te mperature
Lead Temperature
Value
-32
-32
-6
-1.5
-0.6
-4
20
±5
0.8
0.69
1.4
0.7
2.5
178.6
150
-55~+150
260
ZZZFMHOHFFRP
1
Unit
V
V
V
A
A
A
V
V
A
A
A
W
W
℃/W
℃
℃
℃
C,May,2015