BC807U Datasheet, PDF (1/3 Pages) Infineon Technologies AG – PNP Silicon Transistor Array

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
BC807U DUAL TRANSISTOR (PNP+PNP)
FEATURE
 For AF input stages and drive applications
 High h_FE
 Low V_CE(sat)
 Tow (galvanic) internal isolated transistors with good matching
in one package
MARKING: S5B
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_ΘJA
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
-50
-45
-5
-0.5
0.3
417
150
-55～+150
SOT-363
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V_(BR)CBO
Collector-emitter breakdown voltage V(BR)CEO
Emitter-base breakdown voltage
V_(BR)EBO
Collector cut-off current
I_CBO
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
I_EBO
h_FE(1) ^*
h_FE(2) ^*
V_CE(sat) ^*
V_BE(sat) ^*
Transition frequency
f_T
Collector-base capacitance
Ccb
Emitter-base capacitance
Ceb
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
Test conditions
I_C=-10µA, I_E=0
I_C=-10mA, I_B=0
I_E=-10µA, I_C=0
V_CB=-25V, I_E=0
V_EB=-4V, I_C=0
V_CE=-1V, I_C=-100mA
V_CE=-1V, I_C=-500mA
I_C=-500mA, I_B=-50mA
I_C=-500mA, I_B=-50mA
V_CE=-5V,I_C=-50mA,f=20MHz
VCB=-10V,f=1MHz
VEB=-0.5V,f=1MHz
Min
Typ
Max Unit
-50
V
-45
V
-5
V
-0.1
µA
-0.1
µA
160
400
40
-0.7
V
-1.2
V
200
MHz
10
pF
60
pF
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1
B,Mar,2016