ACJT1 Datasheet, PDF (1/5 Pages) JIEJIE MICROELECTRONICS CO.,Ltd – 1A TRIACs

JIEJIE MICROELECTRONICS CO. , Ltd
ACJT1 Series 1A TRIACs
Rev.3.0
DESCRIPTION:
ACJT1 series triacs with high ability to withstand the
shock loading of large current provide high dv/dt rate
with strong resistance to electromagnetic interference.
They are especially recommended for use on inductive
load and serious electromagnetic interference place.
12 ₃
SOT-89
12 ₃
SOT-223
MAIN FEATURES
Symbol
Value
Unit
1 ₃₂
TO-92
I_T(RMS)
V_DRM /V_RRM
1
1000
A
T2(2)
V
T1(1)
I_GT
≤5 or ≤10
mA
G(3)
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Storage junction temperature range
T_stg
Operating junction temperature range
Repetitive peak off-state voltage( T_j=25℃)
Repetitive peak reverse voltage( T_j=25℃)
T_j
V_DRM
V_RRM
Non repetitive surge peak Off-state voltage V_DSM
Non repetitive peak reverse voltage
RMS on-state current
SOT-89/ SOT-223
(T_C=70℃)
TO-92 (T_C=57℃)
Non repetitive surge peak on-state current
( full cycle, F=50Hz)
I²t value for fusing ( tp=10ms)
V_RSM
I_T(RMS)
I_TSM
I²t
Rate of rise of on-state current (I_G=2×I_GT)
Peak gate current
dI_T/dt
I_GM
Average gate power dissipation
P_G(AV)
Value
-40-150
-40-125
1000
1000
V_DRM +100
V_RRM +100
1
10
1.12
50
1
0.2
Unit
℃
℃
V
V
V
V
A
A
A²s
A/μs
A
W
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