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| 3DD13007N36 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (NPN) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
3DD13007N36 TRANSISTOR (NPN)
TO-220-3L
FEATURES
z Power switching applications
1. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
700
400
9
8
2
150
-55~150
Unit
V
V
V
A
W
â
â
2. COLLECTOR
3. EMITTER
123
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Storage time
Fall time
Transition frequency
CLASSIFICATION OF hFE(1)
Range
10-15
15-20
CLASSIFICATION OF tS
Rank
A
Range
3-4(μs )
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)1
VCE(sat)2
VCE(sat)3
VBE(sat)1
VBE(sat)2
tS
tf
fT
Test conditions
IC= 1mA,IE=0
IC=10mA,IB=0
IE=1mA,IC=0
VCB=700V,IE=0
VCE=400V,IB=0
VEB=9V,IC=0
VCE=5V, IC=2A
VCE=5V, IC=8A
IC=2A,IB=0.4A
IC=5A,IB=1A
IC=8A,IB=2A
IC=2A,IB=0.4A
IC=5A,IB=1A
IC=500mA (UI9600)
IC=500mA (UI9600)
VCE=10V, IC=0.5A,f=1MHz
20-25
25-30
B
4-5(μs )
Min Typ Max Unit
700
V
400
V
9
V
100
μA
100
μA
100
μA
10
40
5
1
V
2
V
3
V
1.2
V
1.6
V
3
6
μs
0.5
μs
4
MHz
30-35
35-40
C
5-6 (μs )
www.cj-elec.com
1
D,Oct,2014
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