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| 3DD13005ND86 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (NPN) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
3DD13005ND86 TRANSISTOR (NPN)
TO-220-3L
FEATURES
z Power switching applications
z Low saturation voltage
z High speed switching
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
1. BASE
2. COLLECTOR
3. EMITTER
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
700
420
9
4
2
150
-55-150
Unit
V
V
V
A
W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)C= BO IC= 1mA,IE 0
Collector-emitter breakdown voltage
V(BR)CE= O IC=10mA,IB 0
Emitter-base breakdown voltage
V(B= R)EBO IE=1mA,IC 0
Collector cut-off current
ICBO = VCB=700V,IE 0
Collector cut-off current
ICEO = VCE=400V,IB 0
Emitter cut-off current
= IEBO VEB=7V,IC 0
DC current gain
hFE(1= ) VCE=5V, IC 1A
hFE(2) = VCE=5V, IC 10mA
hFE(3= ) VCE=5V, IC 4A
Collector-emitter saturation voltage
VCE(sat)2
IC=4A,IB=1A
Base-emitter saturation voltage
VBE(sat)
IC=2A,IB=0.5A
Emitter-collector forward volta= ge VECF IC 2A
Storage time
Transition frequency
ts
IC= 250mA (UI9600)
fT
VCE=10V, IC=0.5A
CLASSIFICATION OF hFE(1)
Range
10-15
15-20
20-25
25-30
CLASSIFICATION OF tS
Rank
B1
Range
2.8-3.5(µs )
B2
3.5-4.2 (µs )
Min
Typ
700
420
9
10
5
8
2.8
5
30-35
Max Unit
V
V
V
100
µA
100
µA
100
µA
40
0.8
V
1.6
V
2
V
4.2
µs
MHz
35-40
www.cj-elec.com
1
B,Oct,2014
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