3DD13005ND66F Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (NPN)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
3DD13005ND66F TRANSISTOR (NPN)
TO-220F
FEATURE
 Power switching applications
 Good high temperature
 Low saturation voltage
 High speed switching
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value _Unit
V_CBO
Collector-Base Voltage
700
V
V_CEO
Collector-Emitter Voltage
420
V
V_EBO
Emitter-Base Voltage
9
V
I_C
Collector Current -Continuous
4
A
P_C
Collector Power Dissipation
2
W
R_θJA
Thermal Resistance from Junction to Ambient
62.5
℃/W
T_j
Junction Temperature
150
℃
T_stg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
V_(B= _R)CBO I_C= 1mA,I_E 0
V_(BR)C= _EO I_C= 10mA,I_B 0
V= _(BR)EBO I_E= 1mA,I_C 0
I_CB= _O V_CB=700V,I_E 0
I_CE= _O V_CE=400V,I_B 0
= I_EBO V_EB=7V,I_C 0
h_F= _E(1) V_CE=5V, I_C 1A
h_FE(2) = V_CE=5V, I_C 200mA
h_FE(3= ₎ V_CE=5V, I_C 10mA
h= _FE(4) V_CE=5V, I_C 4A
= V_CE(sat)(1) I_C=1A,I_B 0.2A
Collector-emitter saturation voltage
V_CE(sat)(2)
I_C=2A,I_B=0.4A
A
B
= V_CE(sat)(3) I_C=4A,I_B 1A
Base-emitter saturation voltage
= V_BE(sat) I_C=2A,I_B 0.5A
Diode forward voltage
= V_FEC I_C 2A
Transition frequency
f_T
V_CE= =10V, I= _C 0.5A,f 1MHz
Rise time
= t_r I_C 250mA
Storage time
= t_S I_C 250mA
Fall time
= t_f I_C 250mA
CLASSIFICATION of h_FE
1 . BASE
2. COLLECTOR
3. EMITTER
1₂₃
Min Typ Max Unit
700
V
420
V
9
V
50
µA
50
µA
50
µA
10
40
10
60
5
8
40
0.3
V
0.15
0.28
V
0.25
0.35
V
0.8
V
1.6
V
2
V
5
MHz
0.5
2.0
4.0
µs
0.5
Range 10~15 15~20 20~25 25~30 30~35 35~40 40~45 45~50 50~55 55~60
^{CLASSIFICATION of W6—V}
  
Rank A_{}A_2%B2
Range

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1
 _E,May,2016