3DD13005ND66 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR(NPN)

                      JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

























TO-220-3L
Plastic-Encaps_ ulate

Transistors
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 3DD13005ND6675$16I6725131

FEATURES
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z *RRGKLJKWHPSHUDWXUH
z /RZVDWXUDWLRQYROWDJH

TO-220-3L


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MAXIMUM RATINGS (T_a=25Я unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RșJA
Tj
Tstg
Parameter
Value
&ROOHFWRU%DVH9ROWDJH

&ROOHFWRU(PLWWHU9ROWDJH

(PLWWHU%DVH9ROWDJH

&ROOHFWRU&XUUHQW&RQWLQXRXV
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7KHUPDO5HVLVWDQFHIURP-XQFWLRQWR$PELHQW

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6WRUDJH7HPSHUDWXUH

Unit
9
9
9
$
:
Я:
Я
Я
ELECTRICAL CHARACTERISTICS (T_a=25Я unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Diode forward voltage
Transition frequency
Rise time
Storage time
Fall time
CLASSIFICATION of h_FE
Symbol
Test conditions
Min Typ Max Unit
9%5&%2
9%5&(2
9%5(%2
,&%2
,& P$,( 
,& P$,% 
,( P$,& 
9&% 9,( 





9

9

9
10—$
,&(2
9&( 9,% 

10—$
,(%2
9(% 9,& 

100 µ$ 
K)( 9&( 9,& $

K)(
K)(
9&( 9,& P$1060
9&( 9,& P$




K)( 9&( 9,& $ 


9&(VDW ,& $,% $


9
9&(VDW
,& $,% $             $
%





9
9
9&(VDW ,_& $,_% $


9
9%(VDW ,& $,% $

9)(&
,& $

I₇
9&( 9,& $I 0+]

W_U
,& P$

W6
,& P$0 
W_I
,& P$





0

9
9
0+]
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Range 10~15 15~20 20~25 25~30 30~35 35~40 40~45 45~50 50~55 55~60
^{CLASSIFICATION of W6—V}
  
Rank A_{}A_2%B2

Range
 
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1
G,Oct,2014