3DD13003N3D Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (NPN)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
3DD13003N3D TRANSISTOR (NPN)
TO-126
FEATURES
z Power switching applications
z Good high temperature
z Low saturation voltage
z High speed switching
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
1. BASE
2. COLLECTOR
3. EMITTER
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
700
400
9
1.5
1.25
150
-55~150
Unit
V
V
V
A
W
℃
℃
CIRCUIT:
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Storage time
Emitter-Collector forward voltage
Transition frequency
CLASSIFICATION OF h_FE(1)
Range
10-15
15-20
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CEO
I_EBO
h_FE(1)
h_FE(2)
h_FE(3)
V_CE(sat)
V_BE(sat)
t_S
V_FEC
fT
Test conditions
I_C= 1mA,I_E=0
I_C=10mA,I_B=0
I_E=1mA,I_C=0
V_CB=700V,I_E=0
V_CE=400V,I_B=0
V_EB=9V,I_C=0
V_CE=5V, I_C=0.2A
V_CE=5V, I_C=1mA
V_CE=5V, I_C=1.5A
I_C=1A,I_B=0.2A
I_C=1A,I_B=0.25A
I_C=250mA (UI9600)
I_C=1A
VCE=10V, IC=100mA
20-25
25-30
Min Typ
700
400
9
10
8
5
2
5
30-35
Max Unit
V
V
V
100
μA
100
μA
100
μA
40
0.5
V
1.5
V
4
μs
1.5
V
MHz
35-40
CLASSIFICATION OF t_S
Rank
A1
Range
2-2.5 (μs )
A2
2.5-3(μs )
B1
3-3.5(μs )
B2
3.5-4 (μs )
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1
D,Oct,2014