3DD13003F Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR ( NPN )

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
3DD13003F TRANSISTOR ( NPN )
TO-220F
FEATURE
Power Switching Applications
MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)
Symbol
Parameter
Value Unit
1. BASE
1₂₃
2. COLLECTOR
V_CBO
Collector-Base Voltage
700
V
3. EMITTER
V_CEO
Collector-Emitter Voltage
400
V
V_EBO
Emitter-Base Voltage
9
V
I_C
P_C
R_θJA
T_J, T_stg
Collector Current -Continuous
Collector Dissipation
Thermal Resistance from Junction
to Ambient
Junction and Storage Temperature
1.5
A
2
W
62.5
℃/W
-55~+150 ℃
ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
I= c= 5mA,I_E 0
700
V
Collector-emitter breakdown voltage V(BR)CEO
Ic= = 10mA,I_B 0
400
V
Emitter-base breakdown voltage
V(BR)EBO
= I_E= 2mA, I_C 0
9
V
Collector cut-off current
I_CBO
= V_CB=700V,I_E 0
1
mA
Collector cut-off current
I_CEO
= V_CE=400V,I_B 0
0.5
mA
Emitter cut-off current
I_EBO
= V_EB=9V, I_C 0
DC current gain
h_FE(1)
V_CE=5V,I_C=0.5 A
8
h_FE(2)
V_CE=5V,I_C=1.5 A
5
Collector-emitter saturation voltage
V_CE(sat)
I_C=1A,I_B=250mA
1
mA
40
0.6
V
Base-emitter saturation voltage
V_BE(sat)
I_C=1A, I_B=250mA
Transition frequency
V_CE=10V,Ic=100mA
f_T
5
f =1MHz
Fall time
t_f
I_C= 1A,I_B1=-I_B2=0.2A
V_CC=100V
Storage time
t_s
IC=250mA
2
1.2
V
MHz
0.5
µs
4
µs
CLASSIFICATION OF hFE ₍₁₎
Rank
Range
8-10
10-15
15-20
20-25
25-30
30-35
35-40
CLASSIFICATION OF t_S
Rank
A1
Range
2-2.5 (μs )
A2
2.5-3(μs )
B1
3-3.5(μs )
B2
3.5-4 (μs )
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1
C,May,2016