3DD13002 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – TRANSISTOR(NPN)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L/TO-252-2L Plastic-Encapsulate Transistors
3DD13002 TRANSISTOR (NPN)
FEATURE
Power Switching Applications
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V_CBO
Collector -Base Voltage
600
V
V_CEO
Collector-Emitter Voltage
400
V
V_EBO
Emitter-Base Voltage
6
V
I_C
Collector Current -Continuous
1
A
P_C
Collector Power Dissipation
1.25
W
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55~150
℃
TO-251-3L
TO-252-2L
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Collector-base breakdown voltage
V_(BR)CBO
I_C= 100μA，I_E=0
600
Collector-emitter breakdown voltage V(BR)CEO
I_C= 1mA，I_B=0
400
Emitter-base breakdown voltage
V_(BR)EBO
I_E= 100μA，I_C=0
6
Collector cut-off current
I_CBO
V_CB= 600V，I_E=0
I_CEO
V_CB= 400V，I_E=0
Emitter cut-off current
I_EBO
V_EB= 7V， I_C=0
Dc current gain
h_FE1
V_CE= 10 V, I_C= 200mA
9
h_FE2
V_CE= 10 V, I_C= 0.25mA
5
Collector-emitter saturation voltage
V_CE(sat)
I_C=200mA, I_B= 40mA
Base-emitter saturation voltage
V_BE(sat)
I_C=200mA, I_B= 40mA
Transition frequency
V_CE=10V, I_C=100mA
f_T
5
f =1MHz
Fall time
Storage time
t_f
I_C=1A, I_B1=-I_B2=0.2A
t_s
V_CC=100V
Max Unit
V
V
V
100
µA
100
µA
100
µA
40
0.5
V
1.1
V
MHz
0.5
µs
2.5
µs
CLASSIFICATION OF hFE₁
Range
9-15
15-20
20-25
25-30
30-35
35-40
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1
E,Oct,2014