PB5006_13 Datasheet, PDF (3/6 Pages) Vishay Siliconix – Enhanced isoCink Bridge Rectifiers

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120
100
80
60
40
20
0
0 5 10 15 20 25 30 35 40 45 50 55
Average Forward Current (A)
Fig. 3 - Forward Power Dissipation
100
T_A = 150 °C
T_A = 125 °C
10
T_A = 100 °C
1
T_A = 25 °C
T_A = 85 °C
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V)
Fig. 4 - Typical Forward Characteristics Per Diode
PB5006, PB5008, PB5010
Vishay General Semiconductor
1000
T_A = 150 °C
100
10
T_A = 125 °C
T_A = 100 °C
T_A = 85 °C
1
0.1
T_A = 25 °C
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Reverse Characteristics Per Diode
1000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance Per Diode
Revision: 26-Jun-13
3
Document Number: 84809
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