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| ESDBP5V0D3 Datasheet, PDF (3/6 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – BI-direction ESD Protection Diode | |||
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CHANGJIANG ELEC.TECH.
ELECTRICAL PARAMETER
ESDBP5V0D3
Symbol
VC
IPP
VBR
IT
IR
VRWM
Parameter
Clamping Voltage @ IPP
Peak Pulse Current
Breakdown Voltage @ IT
Test Current
Reverse Leakage Current @ VRWM
Reverse Standoff Voltage
V-I characteristics for a Bi-directional TVS
ELECTRICAL CHARACTERISTICS(Ta=25â unless otherwise specified)
Parameter
Reverse stand off voltage
Symbol
VRWMï¼1ï¼
Test conditions
Min Typ Max
5
Reverse leakage current
IR
VRWM=5V
1
Breakdown voltage
Clamping voltage
V(BR)
VCï¼2ï¼
IT=1mA
IPP=30A
6
8
25
Junction capacitance
CJ
VR=0V,f=1MHz
120
(1).Other voltages available upon request.
(2).Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5
Unit
V
μA
V
V
pF
www.cj-elec.com
3
A-1,Jan,2015
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