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| CJPF07N60 Datasheet, PDF (3/4 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS | |||
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Typical Characteristics
12
Pulsed
Output Characteristics
VGS= 6V ã8Vã10V
8
4
VGS=5V
VGS=4.5V
0
0
10
20
30
DRAIN TO SOURCE VOLTAGE VDS (V)
2.0
Ta=25â
Pulsed
1.5
R
DS(ON)
ââ
I
D
1.0
VGS=10V
0.5
0.0
1
2
3
4
5
6
7
DRAIN CURRENT ID (A)
7
Pulsed
1
0.1
I
S
ââ
V
SD
Ta=100â
Ta=25â
0.01
1E-3
0
200
400
600
800
SOURCE TO DRAIN VOLTAGE VSD (mV)
1000
3.0
VDS=10V
Pulsed
2.5
Transfer Characteristics
2.0
1.5
Ta=100â
Ta=25â
1.0
0.5
0.0
0
1
2
3
4
5
6
7
8
GATE TO SOURCE VOLTAGE VGS (V)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3
RDS(ON)ââ
V
GS
Pulsed
ID=3.5A
Ta=100â
Ta=25â
4
5
6
7
8
9
10
GATE TO SOURCE VOLTAGE VGS (V)
Threshold Voltage
4.0
3.5
ID=250uA
3.0
2.5
2.0
25
50
75
100
125
JUNCTION TEMPERATURE TJ (â)
www.cj-elec.com
3
F,May,2016
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