CJP04N65 Datasheet, PDF (3/4 Pages) ZP Semiconductor – N -Channel Power MOSFET

Typical Characteristics
6
Pulsed
5
4
Output Characteristics
V_GS= 6V、 8V、10V
V_GS=5.5V
3
2
V_GS=5V
1
V_GS=4.5V
0
0
10
20
30
40
DRAIN TO SOURCE VOLTAGE V_DS (V)
6
T_a=25℃
Pulsed
5
R
DS(ON)
——
I
D
4
V_GS=10V
3
2
1
0
2
4
6
8
DRAIN CURRENT I_D (A)
10
Pulsed
I
S
——
V
SD
1
T_a=100℃
0.1
T_a=25℃
0.01
1E-3
0.0
0.4
0.8
1.2
1.6
SOURCE TO DRAIN VOLTAGE V_SD (V)
Transfer Characteristics
1.8
V_DS=10V
Pulsed
1.5
1.2
0.9
T_a=100℃
T_a=25℃
0.6
0.3
0.0
0
1
2
3
4
5
6
7
GATE TO SOURCE VOLTAGE V_GS (V)
R_DS(ON)——
V
GS
16
14
Pulsed
12
I_D=2A
10
8
6
4
2
3
4
5
6
7
8
9 10 11 12
GATE TO SOURCE VOLTAGE V_GS (V)
Threshold Voltage
5
4
I_D=250uA
3
2
1
20
40
60
80
100 120
JUNCTION TEMPERATURE T_J (℃)
www.cj-elec.com
3
B,Apr,2016