BC639 Datasheet, PDF (3/5 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

Typical Characteristics
0.5
COMMON
EMITTER
0.4
T =25℃
a
0.3
0.2
Static Characteristic
2mA
1.8mA
1.6mA
1.4mA
1.2mA
1mA
0.8mA
0.1
0.6mA
0.4mA
I =0.2mA
B
0.0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE V (V)
CE
1000
β=10
V_BEsat —— I_C
800
T =25℃
a
600
400
T =100℃
a
200
1000
V = 2V
CE
100
h_FE —— I_C
T =100 oC
a
T =25 ^oC
a
10
1
10
100
1000
COLLECTOR CURRENT I (mA)
C
200
β=10
V_CEsat —— I_C
150
100
T =100℃
a
T =25℃
a
50
0
0.1
250
1
10
100
1000
COLLECTOR CURRENT I (mA)
C
f_T —— _IC
0
10
1000
200
100
150
100
50
0
0
20
1000
VCE=2V
V =5V
CE
T =25 oC
a
40
60
80
100
COLLECTOR CURRENT I (mA)
C
I ——V
C
BE
100
Ta=100 ^oC
10
Ta=25℃
1
0.1
200
www.cj-elec.com
400
600
800
1000
BASE-EMITTER VOLTAGE V (mV)
BE
10
1
0.1
1200
1000
800
600
400
200
0
0
3
100
1000
COLLECTOR CURRENT I (mA)
C
C_ob / C_ib —— V_CB / V_EB
f=1MHz
I =0 / I =0
E
C
T =25 oC
a
C
ib
C
ob
1
10
20
REVERSE VOLTAGE V (V)
P_c —— T_a
25
50
75
100
125
AMBIENT TEMPERATURE T (℃)
a
150
F,Aug,2017