2SD669 Datasheet, PDF (3/4 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

Typical Characteristics
Static Characteristic
0.36
COMMON EMITTER
T =25℃
a
0.30
2.0mA
1.8mA
0.24
1.6mA
1.4mA
0.18
1.2mA
0.12
0.06
0.00
0
1200
β=10
1.0mA
0.8mA
0.6mA
0.4mA
I =0.2mA
B
1
2
3
4
5
6
COLLECTOR-EMITTER VOLTAGE V (V)
CE
V ——
BEsat
I
c
1000
800
T =25℃
a
600
T =100 ℃
a
400
200
0.1
1
10
100
COLLECTOR CURREMT I (mA)
C
1500
1000
I —— V
C
BE
COMMON EMITTER
V =5V
CE
1000 1500
100
10
1
200
1.2
400
600
800
BASE-EMMITER VOLTAGE V (mV)
BE
P —— T
C
a
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
AMBIENT TEMPERATURE T (℃)
a
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1000
150
3
1000
COMMON EMITTER
V = 5V
CE
h ——
FE
I
C
T =100℃
a
100
T =25℃
a
10
1
500
β=10
10
100
COLLECTOR CURRENT I (mA)
C
V
CEsat
——
I
C
1000 1500
100
T
=100
a
℃
T
=25^℃
a
10
10
1000
100
10
0.1
100
COLLECTOR CURRENT I (mA)
C
C /C —— V /V
ob ib
CB EB
1000 1500
f=1MHz
I =0/I =0
E
C
T =25 ℃
a
C
ib
C
ob
1
10
100
COLLECTOR-BASE VOLTAGE V (V)
D,Aug,2017