2N3904 Datasheet, PDF (3/5 Pages) NXP Semiconductors – NPN switching transistor

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100
COMMON EMITTER
T =25ć
a
500uA
80
450uA
400uA
350uA
60
300uA
250uA
40
200uA
20
0
0
1000
150uA
100uA
I =50uA
B
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE V (V)
CE
9
²² ,
&(VDW
&
1000
300
100
30
10
1
3000
K ²²
)(
T_a=100ć
,
&
COMMON EMITTER
V =1V
CE
T =25ć
a
3
10
30
100
200
COLLECTOR CURRENT I (mA)
C
9
²²
%(VDW
,_&
300
T =100ć
a
100
T =25ć
a
30
1000
10
1
200
100
30
10
3
1
0.3
0.1
0.2
1000
300
3
10
30
COLLECTOR CURRENT I (mA)
c
,
&
²²
9
%(
ȕ=10
100
200
V =5V
CE
Ta=100ć
Ta=25ć
0.4
0.6
0.8
1.0
1.2
BASE-EMI7TER VOLTAGE V (V)
BE
I ²² ,
7
&
COMMON
EMITTER
V =20V
CE
T_a=25ć
100
10
2
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5
10
30
COLLECTOR CURRENT I (mA)
C
70

100
1
10
1
0.1
0.1
700
600
500
400
300
200
100
0
0
T_a=25ć
T =100ć
a
3
10
30
COLLECTOR CURRENT I (mA)
C
&  & ²²
RE LE
9 9
&% (%
C
ib
ȕ=10
100
200
f=1MHz
I =0/I =0
E
C
Ta=25ć
C
ob
0.3
1
3
10
20
REVERSE BIAS VOLTAGE V (V)
3F ²² 7D
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(ć)
($XJ