UMG4N Datasheet, PDF (2/4 Pages) Diodes Incorporated – DUAL NPN PRE-BIASED TRANSISTOR

Typical Characteristics
3.0
COMMON
EMITTER
2.5 T =25℃
a
Static Characteristic
10uA
9uA
2.0
8uA
7uA
1.5
6uA
5uA
1.0
4uA
3uA
0.5
2uA
I =1uA
B
0.0
0
1
2
3
4
5
6
7
COLLECTOR-EMITTER VOLTAGE V (V)
CE
50
β=10
V ——
BEsat
I
C
10
T =25℃
a
T =100 ℃
a
1
0.1
0.1
1
10
100
COLLECTOR CURREMT I (mA)
C
I —— V
C
BE
100
10
1
0.1
0.1
200
COMMON EMITTER
VCE=5V
1
10
BASE-EMMITER VOLTAGE V (V)
BE
P —— T
D
a
h —— I
FE
C
1000
T =100℃
a
T =25℃
100
a
10
0.1
500
β=10
COMMON EMITTER
VCE= 5V
1
10
100
COLLECTOR CURRENT I (mA)
C
V
——
CEsat
I
C
100
T =100 ℃
a
10
0.1
20
10
T =25℃
a
1
10
COLLECTOR CURRENT I (mA)
C
C /C ——
ob ib
V /V
CB EB
C
ib
100
f=1MHz
I =0/I =0
C
E
T =25 ℃
a
C
ob
1
0.1
1
10
30
REVERSE VOLTAGE V (V)
150
100
50
0
0
25
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50
75
100
125
AMBIENT TEMPERATURE T (℃)
a
150
2
D,Mar,2016