RB501G-40 Datasheet, PDF (2/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY BARRIER DIODE

Typical Characteristics
Forward Characteristics
100
10
1
0.1
0.0
0.2
0.4
0.6
0.8
FORWARD VOLTAGE V (V)
F
Capacitance Characteristics Per Diode
30
T =25℃
a
f=1MHz
25
20
15
10
5
0
0
5
10
15
20
REVERSE VOLTAGE V (V)
R
Reverse Characteristics
100
T =100 ℃
10
a
1
T =25 ℃
a
0.1
0.01
0
10
20
30
40
REVERSE VOLTAGE V (V)
R
Power Derating Curve
120
100
80
60
40
20
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE T (℃)
a
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2
E,Mar,2015