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| MMDT2222A Datasheet, PDF (2/5 Pages) Transys Electronics – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Input Capacitance
Noise Figure
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
hFE(6)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
Cib
NF
Test conditions
IC= 10μA, IE=0
IC= 10mA, IB=0
IE=10μA.IC=0
VCB= 60V, IE=0
VCE= 60V,VEB(off)=3V
VEB= 3 V, IC=0
VCE=10V, IC= 0.1mA
VCE=10V, IC= 1mA
VCE=10V, IC= 10mA
VCE=10V, IC= 150mA
VCE=10V, IC= 500mA
VCE=1V, IC= 150mA
IC=150mA, IB= 15mA
IC=500mA, IB= 50mA
IC=150mA, IB=15mA
IC=500mA, IB= 50mA
VCE=20V, IC= 20mA,
f=100MHz
VCB=10V, IE=0,f=1MHz
VEB=0.5V,IC= 0,f=1MHz
VCE=10V, IC=100μA,
f=1KHz,Rs=1Kâ¦
Min
75
40
6
35
50
75
100
40
35
0.6
300
Max
10
10
10
300
0.3
1
1.2
2
8
25
4
Switching characteristics
Parameter
Symbol
Test conditions
Min
Delay time
Rise time
td
VCC=30V, IC=150mA,
tr
VBE(off)=0.5V,IB1=15mA
Storage time
Fall time
tS
VCC=30V, IC=150mA,
tf
IB1= -IB2= 15mA
Max
10
25
225
60
Unit
V
V
V
nA
nA
nA
V
V
V
V
MHz
pF
pF
dB
Unit
ns
ns
ns
ns
www.cj-elec.com
2
E,Mar,2016
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