MMBT1616A Datasheet, PDF (2/4 Pages) Galaxy Semi-Conductor Holdings Limited – NPN Silicon Epitaxial Planar Transistor

Typical Characteristics
Static Characteristic
0.5
COMMON
EMITTER
0.4
T =25℃
a
1mA
0.9mA
0.3
0.8mA
0.7mA
0.2
0.6mA
0.5mA
0.4mA
0.1
0.3mA
0.2mA
I =0.1mA
0.0
B
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE V (V)
CE
1000
β=20
V —— I
BEsat
C
800
T =25℃
a
600
400
T =100℃
a
200
0
0.1
250
1
10
100
1000
COLLECTOR CURRENT I (mA)
C
f
T
——
I
C
200
150
100
50
0
5
20
1000
VCE=2V
V =2V
CE
T =25 oC
a
40
60
80
100
COLLECTOR CURRENT I (mA)
C
I ——V
C
BE
100
Ta=100 ^oC
10
Ta=25℃
1
0.1
200
www.cj-elec.com
400
600
BASE-EMITTER VOLTAGE
800
V (mV)
BE
1000
2
1000
V = 2V
CE
100
h —— I
FE
C
T =100 oC
a
T =25 oC
a
10
1
200
β=20
150
100
50
10
100
COLLECTOR CURRENT I (mA)
C
V —— I
CEsat
C
T =100℃
a
T =25℃
a
1000
0
100
1000
100
10
200
400
600
COLLECTOR CURRENT I (mA)
C
800 1000
C / C ——
ob
ib
V /V
CB
EB
f=1MHz
I =0 / I =0
E
C
T =25 oC
a
C
ib
C
ob
1
0.1
0.5
1
10
20
REVERSE VOLTAGE V (V)
P —— T
c
a
0.4
0.3
0.2
0.1
0.0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE T (℃)
a
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