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| FMQT4292 Datasheet, PDF (2/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR | |||
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A42 ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol Test conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
HFE(1)
HFE(2)
HFE(3)
VCE(sat)
VBE(sat)
fT
Ic= 100µA, IE=0
Ic= 1 mA, IB=0
IE= 100µA, IC=0
VCB=200V, IE=0
VEB= 5V, IC=0
VCE= 10V, IC= 1mA
VCE= 10V, IC=10mA
VCE=10V, IC=30mA
IC=20 mA, IB= 2mA
IC= 20 mA, IB=2mA
VCE= 20V, IC= 10mA
f=30MHz
MIN MAX UNIT
310
V
305
V
5
V
0.25 µA
0.1
µA
60
100
200
60
0.2
V
0.9
V
50
MHz
A92 ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
HFE(1)
HFE(2)
HFE(3)
VCE(sat)
VBE(sat)
fT
Test conditions
Ic= -100µA, IE=0
Ic= -1mA, IB=0
IE= -100µA, IC=0
VCB=-200V, IE=0
VEB= -5V, IC=0
VCE= -10V, IC= -1mA
VCE= -10V, IC=-10mA
VCE= -10V, IC=-30mA
IC=-20 mA, IB= -2mA
IC= -20 mA, IB= -2mA
VCE=-20V, IC= -10mA
f=30MHz
MIN
-300
-300
-5
60
100
60
50
MAX
-0.25
-0.1
200
-0.2
-0.9
UNIT
V
V
V
µA
µA
V
V
MHz
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