ES0406D1 Datasheet, PDF (2/4 Pages) Taiwan Semiconductor Company, Ltd – Fast Recovery Rectifier Diode

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Forward Characteristics
400
100
10
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
FORWARD VOLTAGE V (V)
F
Reverse Characteristics
1000
100
Ta=100℃
10
Ta=25℃
1
0.1
100
200
300
400
500
600
REVERSE VOLTAGE V (V)
R
Capacitance Characteristics
18
Ta=25℃
16
f=1MHz
14
12
10
8
6
4
2
0
0
5
10
15
20
REVERSE VOLTAGE V (V)
R
Power Derating Curve
500
415
400
300
200
100
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (℃)
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2
C,Mar,2015