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DTA114TCA Datasheet, PDF (2/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – Digital transistors (built-in resistors)
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
LIMITS(DTA114T□)
E
UA
KA
CA
SA
VCBO
Collector-Base Voltage
-50
VCEO
VEBO
IC
PC
TJ, Tstg
Collector-Emitter Voltage
-50
Emitter-Base Voltage
-5
Collector Current -Continuous
-100
Collector Dissipation
150
200
300
Junction and Storage Temperature
-55~+150
Units
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
Collector-base breakdown voltage
V(BR)CBO
Ic=-50µA,IE=0
-50
Collector-emitter
breakdown
V(BR)CEO
Ic=-1mA,IB=0
-50
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
V(BR)EBO
ICBO
IEBO
hFE
IE=-50µA,IC=0
VCB=-50V,IE=0
VEB=-4V,IC=0
VCE=-5V,IC=-1mA
-5
100 250
Collector-emitter saturation voltage VCE(sat)
IC=-10mA,IB=-1mA
Transition frequency
fT
VCE=-10V,IC=-5mA, f=100MHz
250
Imput resistor
R1
7
10
MAX UNIT
V
V
V
-0.5 uA
-0.5 uA
600
-0.3
V
MHz
13
kΩ
Typical Characteristics