CJL2301 Datasheet, PDF (2/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – Dual P-Channel MOSFET

MOSFET ELECTRICAL CHARACTERISTICS
T_a=25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
STATIC PARAMETERS
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =-250µA
Zero gate voltage drain current
IDSS
VDS =-20V,VGS = 0V
Gate-body leakage current
IGSS
VGS =±8V, VDS = 0V
Gate threshold voltage (note 1)
VGS(th)
VDS =V_GS, ID =-250µA
VGS =-4.5V, ID =-2.5A
Drain-source on-resistance (note 1) RDS(on) VGS =-2.5V, ID =-2A
VGS =-1.8V, ID =-1.6A
Forward tranconductance (note 1)
gFS
VDS =-5V, ID =-2.8A
Diode forward voltage (note 1)
V_DS
I_S=-0.7A, VGS = 0V
DYNAMIC PARAMETERS (note2)
Input Capacitance
C_iss
Output Capacitance
C_oss
VDS =-10V,VGS =0V,f =1MHz
Reverse Transfer Capacitance
C_rss
SWITCHING PARAMETERS (note 2)
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
V_DD=-10V,V_GEN=-4.5V,I_D=-1A
R_L=10Ω,R_GEN=1Ω
Turn-off fall time
tf
Total Gate Charge (-4.5V)
Total Gate Charge (-2.5V)
Gate-Source Charge
Q_g
VDS =-10V,VGS =-2.5V,ID=-3A
Q_gs
Gate-Drain Charge
Q_gd
Notes : 1. Pulse Test : Pulse width≤300μs, duty cycle≤0.5%.
2. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
-20
V
-1
µA
±100 nA
-0.4 -0.7
-1
V
58
90
mΩ
80
125
mΩ
120 200 m Ω
4
S
-1.2
V
405
pF
75
pF
55
pF
20
ns
60
ns
50
ns
20
ns
5.5
10
nC
3.3
6
nC
0.7
nC
1.3
nC
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2
E,Aug,2015