CJAC35N03 Datasheet, PDF (2/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel Power MOSFET

MOSFET ELECTRICAL CHARACTERISTICS
T_a=25 ℃ unless otherwise specified
Parameter
Off characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
On characteristics (note1)
Gate-threshold voltage
Static drain-source on-sate resistance
Forward transconductance
Dynamic characteristics (note 2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching characteristics (note 2)
Symbol
Test Condition
V(BR) DSS VGS = 0V, ID =250µA
IDSS
VDS =30V, VGS =0V
IGSS
VDS =0V, VGS =±20V
VGS(th)
RDS(on)
gFS
VDS =VGS, ID =250µA
VGS =4.5V, ID =10A
VGS =10V, ID =12A
VDS =10V, ID =12A
Ciss
Coss
Crss
VDS =15V,VGS =0V,
f =1MHz
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Turn-on delay time
td(on)
Turn-on rise time
tr
Turn-off delay time
td(off)
Turn-off fall time
tf
Drain-Source Diode Characteristics
Drain-source diode forward voltage(note1)
VSD
Continuous drain-source diode forward
IS
current(note3)
Pulsed drain-source diode forward current
ISM
Notes:
1. Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.
2. Guaranteed by design, not subject to production.
3. Surface Mounted on FR4 Board, t ≤ 10 sec.
VDS=15V, VGS=10V,
ID=12A
VDD=15V,ID=12A,
VGS=10V,RG=6Ω
VGS =0V, IS=12A
Min Typ
Max Unit
30
V
1
µA
±100
nA
1.0
1.6
8.2
5.0
30
3.0
V
12
mΩ
7.0
mΩ
S
1265
600
pF
130
19
2.7
nC
2.5
18
10
ns
34
10
0.85
1.2
V
35
A
120
A
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2
A-6,Oct,2016