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| BD234 Datasheet, PDF (2/4 Pages) STMicroelectronics – SILICON PNP TRANSISTOR | |||
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(/(&75,&$/ &+$5$&7(5,67,&6
Ta=25 Я unless otherwise specified
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
BD234
BD236
BD238
BD234
BD236
BD238
BD234
BD236
BD238
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
Test conditions
IC=-1mA,IE=0
IC=-100mA,IB=0
IE=-1mA,IC=0
VCB=-45V, IE=0
VCB=-60V, IE=0
VCB=-100V, IE=0
VEB=-5V, IC=0
hFE(1) VCE=-2V, IC=-150mA
hFE(2) VCE=-2V, IC=-1A
VCE(sat)
fT
IC=-1A, IB=-100m A
VCE=-10V, IC=-250mA,
f =10MHz
Min
-45
-60
-100
-45
-60
-80
-5
40
25
3
Max
-100
-1
-0.6
Unit
V
V
V
µA
mA
V
MHz
www.cj-elec.com
2
C,Aug,2017
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