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| BC857 Datasheet, PDF (2/5 Pages) STMicroelectronics – SMALL SIGNAL PNP TRANSISTORS | |||
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ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BC856
BC857
BC858
BC856
BC857
BC858
Symbol T est conditions
VCBO IC= -10μA, IE=0
VCEO IC= -10mA, IB=0
Min
Max Unit
-80
-50
V
-30
-65
-45
V
-30
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
BC856
BC857
BC858
BC856
BC857
BC858
VEBO
ICBO
ICEO
IEBO
IE= -1μA, IC=0
VCB= -70 V , IE=0
VCB= -45 V , IE=0
VCB= -25 V , IE=0
VCE= -60 V , IB=0
VCE= -40 V , IB=0
VCE= -25 V , IB=0
VEB= -5 V , IC=0
-5
V
-0.1 μA
-0.1 μA
-0.1 μA
DC current gain
BC856A, 857A,858A
BC856B, 857B,858B
hFE
VCE= -5V,IC= -2mA
BC857C,BC858C
125
250
220
475
420
800
Collector-emitter saturation voltage
VCE(sat)
IC=-100mA,IB= -5 mA
-0.5
V
Base-emitter saturation voltage
VBE(sat)
IC= -100mA, IB= -5mA
-1.1
V
Transition frequency
fT
VCE= -5 V, IC= -10mA
f=100MHz
100
MHz
Collector capacitance
Cob
VCB=-10V, f=1MHz
4.5
pF
www.cj-elec.com
2
AD,JOucnt,2014
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