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| BC238 Datasheet, PDF (2/4 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR | |||
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(/(&75,&$/ &+$5$&7(5,67,&6
Ta=25 Я unless otherwise specified
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
VBE
fT
IC=100μA, IE=0
BC237
BC238/239
IC=2mA, IB=0
BC237
BC238/239
IE=100μA, IC=0
BC237
BC238/239
VCE=50V, VBE=0
VCB=30V,IE=0
BC237
BC238/239
VCE=5V, IC=10μA
BC237A
BC237B/238B
BC237C/238C/239C
VCE=5V, IC=2mA
BC237
BC239
BC237A
BC237B/238B
BC237C/238C/239C
VCE=5V, IC=100mA
BC237A
BC237B/238B
BC237C/238C/239C
IC=10mA, IB=0.5mA BC237/238/239
IC=100mA, IB=5mA
BC237/239
BC238
IC=10mA,IB=0.5mA
IC=100mA,IB=5mA
VCE=5V, IC=0.1mA
VCE=5V, IC=2mA
VCE=5V, IC=100mA
VCE=3V,IC=0.5mA,f=100MHz BC237
BC238
BC239
VCE=5V,IC=10mA,f=100MHz BC237
BC238
BC239
Cob
VCB=10V, IE=0, f=1MHz
Min
50
30
45
25
6
5
120
120
120
200
380
0.55
150
150
150
Emitter-base capacitance
Noise figure
Cib
VEB=0.5V, IC=0, f=1MHz
VCE=5V, Ic=0.2mA,
f=1kHZ, Rs=2Kâ¦
BC239
VCE=5V, Ic=0.2mA,
NF
f=1kHZ, Rs=2Kâ¦, Îf=200Hz BC237
BC238
BC239
Typ
90
150
270
120
180
300
0.5
0.83
100
120
140
200
240
280
8
2
2
2
2
Max
15
800
800
220
460
800
0.2
0.6
0.8
0.83
1.05
0.7
4.5
4
10
10
4
Unit
V
V
V
nA
V
V
V
MHz
pF
Pf
dB
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