BAS40V Datasheet, PDF (2/4 Pages) Diodes Incorporated – DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE

Typical Characteristics
200
Pulsed
100
Forward Characteristics
T =100℃
a
10
1
T =25℃
a
0.1
0.0
0.2
0.4
0.6
0.8
1.0
FORWARD VOLTAGE V (V)
F
Capacitance Characteristics
4.0
T =25℃
a
f=1MHz
3.5
3.0
2.5
2.0
1.5
1.0
0
5
10
15
20
25
30
REVERSE VOLTAGE V (V)
R
100
Pulsed
10
Reverse Characteristics
T =100℃
a
1
0.1
0.01
T =25℃
a
1E-3
0
10
20
30
40
REVERSE VOLTAGE V (V)
R
Power Derating Curve
0.20
0.15
0.10
0.05
0.00
0
25
50
75
100
125
AMBIENT TEMPERATURE T (℃)
a
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2
E,Oct,2015