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| 2SD2136 Datasheet, PDF (2/4 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type | |||
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Ta=25 Я unless otherwise specified
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO*
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Collector cut-off current
ICEO
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
IEBO
hFE(1) *
hFE(2) *
VCE(sat)*
VBE*
Transition frequency
fT
*Pulse test: pulse width â¤300μs, duty cycle⤠2.0%.
Test conditions
IC=100µA,IE=0
IC=30mA,IB=0
IE= 100µA,IC=0
VCB=60V,IE=0
VCE=60V,IB=0
VEB=6V,IC=0
VCE=4V, IC=1A
VCE=4V, IC=3A
IC=3A,IB=0.375A
VCE=4V, IC=3A
VCE=5V,IC=0.1A, f=10MHz
CLASSIFICATION OF hFE(1)
RANK
RANGE
P
40-90
Q
70-150
Min Typ Max Unit
60
V
60
V
6
V
200 μA
300 μA
1
mA
40
250
10
1.2
V
1.8
V
30
MHz
R
120-250
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2
D,Aug,2017
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