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| 2SD1047 Datasheet, PDF (2/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(12A,140V,100W) | |||
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ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC=5mA,IE=0
160
Collector-emitter breakdown voltage
V(BR)CEO IC=50mA,IB=0
140
Emitter-base breakdown voltage
V(BR)EBO IE=5mA,IC=0
6
Collector cut-off current
ICBO
VCB=160V,IE=0
Emitter cut-off current
IEBO
VEB=4V,IC=0
DC current gain
hFE(1)*
VCE=5V, IC=1A
60
hFE(2)*
VCE=5V, IC=6A
20
Collector-emitter saturation voltage
VCE(sat)*
IC=5A,IB=0.5A
Base-emitter voltage
VBE
VCE=5V, IC=1A
Collector output capacitance
Cob
VCB=10V,IE=0, f=1MHz
Transition frequency
fT*
VCE=5V,IC=1A
10
Notes: Pulse Test : Pulse Widthâ¤300µs, duty cycle â¤2%.
Typ Max Unit
V
V
V
100 μA
100 μA
200
2
V
1.5
V
150
pF
MHz
CLASSIFICATION OF hFE
RANK
RANGE
D
60-120
E
100-200
www.cj-elec.com
2
A-2,May,2015
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