English
Language : 

2SA1952 Datasheet, PDF (2/5 Pages) Rohm – High-speed Switching Transistor (-60V, -5A)
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)*
hFE(2)*
VCE(sat)*
Base-emitter saturation voltage
VBE(sat)*
Collector output capacitance
Cob
Transition frequency
fT*
Turn-on time
ton
Storage time
tS
Fall time
tf
Notes:
1. Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.
IC=-50μA,IE=0
IC=-1mA,IB=0
IE=-50μA,IC=0
VCB=-100V,IE=0
VEB=-5V,IC=0
VCE=-2V, IC=-1A
VCE=-2V, IC=-3A
IC=-3A,IB=-0.15A
IC=-4A,IB=-0.2A
IC=-3A,IB=-0.15A
IC=-4A,IB=-0.2A
VCB=-10V,IE=0, f=1MHz
VCE=-10V,IC=-0.5A,
f=30MHz
VCC=-30V,
IC=-3A,IB1=-IB2=150mA
-100
V
-60
V
-5
V
-10
μA
-10
μA
120
270
40
-0.3
V
-0.5
V
-1.2
V
-1.5
V
130
pF
80
MHz
0.3
μs
1.5
μs
0.3
μs
www.cj-elec.com
2
C,Mar,2016