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| 2SA1082 Datasheet, PDF (2/5 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor | |||
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(/(&75,&$/ &+$5$&7(5,67,&6
Ta=25 Я unless otherwise specified
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE
Cob
fT
Test conditions
IC=- 0.01mA,IE=0
IC=-1mA,IB=0
IE=-0.01mA,IC=0
VCB=-50V,IE=0
VEB=-2V,IC=0
VCE=-12V, IC=-2mA
IC=-10mA,IB=-1mA
VCE=-12V, IC=-2mA
VCB=-10V,IE=0, f=1MHz
VCE=-12V,IC=-2mA
Min Typ
-120
-120
-5
250
-0.6
3.5
90
Max
-0.1
-0.1
800
-0.2
Unit
V
V
V
ÈA
ÈA
V
V
pF
MHz
CLASSIFICATION OF hFE
RANK
RANGE
D
250-500
E
400-800
www.cj-elec.com
($XJ
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