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| ZUMT491 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – SOT323 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-323 Plastic-Encapsulate Transistors
ZUMT491 TRANSISTOR (NPN)
SOTâ 323
FEATURES
â Extremely low saturation voltage
â 500mW power dissipation
â 1 Amp continuous collector current (IC)
APPLICATIONS
â Ideally suited for space / weight critical applications
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To ambient
Junction Temperature
Storage Temperature
Value
80
60
5
1
250
500
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
1.BASE
2.EMITTER
3.COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=100µA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO * IC=10mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=100µA,IC=0
Collector cut-off current
ICBO
VCB=60V,IE=0
Collector cut-off current
ICES
VCES=60V,IB=0
Emitter cut-off current
IEBO
VEB=4V,IC=0
hFE(1)
VCE=5V, IC=1mA
DC current gain
hFE(2) *
hFE(3) *
VCE=5V, IC=500mA
VCE=5V, IC=1A
hFE(4) *
VCE=5V, IC=2A
Collector-emitter saturation voltage
VCE(sat)1 *
VCE(sat)2 *
IC=500mA,IB=50mA
IC=1A,IB=100mA
Base emitter saturation voltage
VBE(sat) * IC=1A, IB=100mA
Base emitter turn on voltage
VBE(on) *
VCE=5V,IC=1A
Transition frequency
fT
VCE=10V, IC=50mA,f=100MHz
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
* Measured under pulsed conditions. Pulse width 300μsï¼Duty cycleâ¤2%.
Min Typ Max Unit
80
V
60
V
5
V
0.1
μA
0.1
μA
0.1
μA
100
100
300
80
30
0.25
V
0.5
V
1.1
V
1
V
150
MHz
10
pF
www.cj-elec.com
1
BA,SJuenp,,22001144
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