ZTX450 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
ZTX450 TRANSISTOR (NPN)
FEATURES
z Low Breakdown Voltage
z General Purpose Amplifier Transistor
To – 92
1.EMITTER
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_ΘJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
45
5
1
625
200
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
*Pulse test
Symbol
Test conditions
V_(BR)CBO
V_(BR)CEO^*
I_C=100μA, I_E=0
I_C=10mA, I_B=0
V_(BR)EBO I_E=100μA, I_C=0
I_CBO
V_CB=45V, I_E=0
I_EBO
h_FE(1)^*
h_FE(2)^*
V_CE(sat)^*
V_BE(sat)^*
f_T
V_EB=4V, I_C=0
V_CE=10V, I_C=150mA
V_CE=10V, I_C=1A
I_C=150mA, I_B=15mA
I_C=150mA, I_B=15mA
V_CE=10V,I_C=50mA,f=100MHz
C_ob
V_CB=10V, I_C=0, f=1MHz
Min Typ Max Unit
60
V
45
V
5
V
0.1
μA
0.1
μA
100
300
15
0.25
V
1.1
V
150
MHz
15
pF
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1
C,Dec,2015