UMZ2N Datasheet, PDF (1/6 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – DUAL TRANSISTOR (PNP+NPN)

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
UMZ2N DUAL TRANSISTOR (PNP+NPN)
FEATURES
z Both 2SA1037AK and 2SC2412K chip in a package
z Transistor elements are independent, eliminating interference
z Mounting cost and area be cut in half
Marking: Z2
SOT-363
Absolute maximum ratings (Ta=25℃)
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Limits
Tr1
Tr2
-60
60
-50
50
-6
7
-150 150
150
150
-55-150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Tr1 (PNP)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V_(BR)CBO I_C=-50μA, I_E=0
Collector-emitter breakdown voltage
V_(BR)CEO I_C=-1mA, I_B=0
Emitter-base breakdown voltage
V_(BR)EBO I_E=-50μA, I_C=0
Collector cut-off current
I_CBO
V_CB=-60V, I_E=0
Emitter cut-off current
I_EBO
V_EB=-6V, I_C=0
DC current gain
h_FE
V_CE=-6V, I_C=-1mA
Collector-emitter saturation voltage
V_CE(sat) I_C=-50mA, I_B=-5mA
Transition frequency
f_T
V_CE=-12V, I_E=2mA, f=100MHz
Collector output capacitance
C_ob
V_CB=-12V, I_E=0, f=1MHz
Min Typ Max Unit
-60
V
-50
V
-6
V
-0.1 μA
-0.1 μA
120
560
-0.5
V
140
MHz
5
pF
www.cj-elec.com
1
E,Mar,2016